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| Our Sputtering targets are created using
the technical skills AGC Ceramics has gained through the development of
diverse fine ceramic materials. They are of the highest quality and stability.
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Using our advanced technical
skills, all sputtering target-manufacturing processes (material processing, forming,
burning, processing, and bonding) are carried out via integrated production. This
makes the distribution of high quality and stability sputtering targets possible.
Also, with the development of our company's original large bonding equipment,
we are capable of producing targets with a maximum size of 3.8m x 0.5m.
Furthermore, we provide customer-orientated technical support including: film
evaluation, film deposition and arcing (abnormal electric discharge) prevention
technologies. Also, through the design and production of our original sputter
film deposition machines (cathode, power source, and others), we offer solid technical
skills that satisfy our customer's needs. |
What is sputtering?
By placing the sputtering target and board opposite to
each other in a vacuum chamber and by increasing the voltage, the introduced gases
such as argon becomes plasmic. During this process, the ions generated are accelerated
by electric fields and hit the target. The target components rush out and stick
to the board opposite to the target.
Sputtering is a method that by using this principle creates thin films on the
board ranging from angstrom units to micron orders. |
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| Material |
Material type |
Function of material |
Function of sputter
film (Oxidation film) |
Main usages |
| DC film deposition |
Others |
Durability |
Refractive index |
Characteristic of film |
Others |
| Si Group |
ST |
 |
Variable composition |
 |
1.7 - 2.0 |
Amorphous |
Colorless high transparent film |
Anti reflection films of products
such as displays or touch-panels; infrared rays reflection films of automobiles
and buildings; optical films. |
| SX |
 |
Low arcing |
 |
1.7 |
Amorphous |
Colorless high transparent film
High hydrophobicity |
| SC |
 |
SiO2high rate deposition.
Stable electric discharge |
 |
1.46 |
Amorphous |
SiO2Film |
| Ti Group |
TXO |
 |
TiO2high rate deposition |
 |
2.45 |
Amorphous |
TiO2Film |
| Nb Group |
NBO |
 |
Nb2O5high rate deposition |
 |
2.3 |
Amorphous |
Nb2O5Film |
| Zn Group |
GZO |
 |
Arfilm deposition,
Low nodule |
|
1.9 |
Crystal |
Transparent conductive film |
Optical films of displays, transparent
conductive films of solar cells, electric cars and anti-static coats. |
| AZO |
 |
Arfilm deposition,
Low nodule |
|
1.9 |
Crystal |
Transparent conductive film |
Sn Group
(In process of developing) |
GIT |
 |
Arfilm deposition,
Low nodule |
 |
2 |
Amorphous |
Transparent conductive film |
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