Materials	Product name	Target material		Characteristic of film
		DC sputter	Characteristics	Conductivity	Chemical stability	Other characteristics
Zn Group	GZO		High density usable in argon gas only		X	crystallizing film n=1.9
	AZO		High density usable in argon gas only		X	crystallizing film n=1.9
Sn Group	GIT(In developmental process)		High density	(High resistance)		SnO2Amorphous film n=2.0

GZO, AZO Characteristics - It is a high density ZnO group target with a relative density of more than 90%. - Conductivity is high, and is suited for DC sputtering. - Great electrical investment is possible. (High rate deposition is possible). - Compared to the ITO, nodules are less likely to be generated, and a stable electric discharge can be achieved. - Deposition in a pure argon atmosphere is possible. - A crystallized film is created via deposition even at room temperature.

GIT Characteristics - It is a high density SnO2 group target with a relative density of more than 90%. - Conductivity is high, and is suited for DC sputtering. - Compared to the ITO, a high rate deposition is possible. - Gains an amorphous film through oxidation react-ability sputtering. - The film gained by oxidation react-ability sputtering is a transparent conductive film with high resist-ability. - The film gained by oxidation react-ability sputtering is resistant to grazing or scratching and is also resistant to chemicals.