Material	Product name	Target		Film (If it is an oxidation film)
		DC sputter	Characteristics	Alkali-resistant	Acid-resistant	Anti-gauze and scratches	Others
Si Group	SC		high rate deposition( > CrystalSi) Great strength High thermal conductivity				n=1.46 Amorphous
Nb Group	NBO		High density high rate deposition( > Nb)				n=2.3 Amorphous
Ti Group	TXO		high rate deposition( > Ti)				n=2.45 Amorphous

SC Characteristics - Due to its great strength and its high thermal conductivity, and because it is a target of uniformed formation, it enables a long-term stable electric discharge. - Because it is conductive, it is suited for DC sputtering. - It enables a 20% and higher rate deposition when compared to deposition from crystal Si. - Amorphous SiO2 film is gained by oxidation react-ability sputtering. - The film gained by oxidation react-ability sputtering is clear with high permeability.

TXO Characteristics - Compared to deposition from metal Ti, a deposition rate of about seven times greater is possible. - Conductivity is high, and it is a titan oxide target suited for DC sputtering. - Amorphous TiO2 film is gained by oxidation react-ability sputtering. - Even when multi-layers are created by oxidation react-ability sputtering, its amorphous quality is maintained. - The film gained by oxidation react-ability sputtering is clear with high permeability.

NBO Characteristics - Compared to deposition from metal Nb, a deposition rate of about three times greater is possible. - Conductivity is high and it is a niobium oxide target suited for DC sputtering. - Amorphous Nb2O5 film is gained by oxidation react-ability sputtering. - The film gained by oxidation react-ability sputtering is clear with high permeability.